Uniaxially oriented polycrystalline thin films and air-stable n-type transistors based on donor-acceptor semiconductor (diC8BTBT)(FnTCNQ) [n = 0, 2, 4]

Charge trapping in mixed organic donor-acceptor semiconductor thin films.

A pump-probe method, whereby trapped charges are optically induced to contribute to the total photocurrent, is applied to quantitatively determine the trap density in small-molecule organic semiconductor thin films and donor-acceptor blends used in organic solar cells. The trapped charge density is correlated to the cell performance, and the dependence of charge trapping on the presence of nano...

Toward air-stable multilayer phosphorene thin-films and transistors

Few-layer black phosphorus (BP), also known as phosphorene, is poised to be the most attractive graphene analogue owing to its high mobility approaching that of graphene, and its thickness-tunable band gap that can be as large as that of molybdenum disulfide. In essence, phosphorene represents the much sought after high-mobility, large direct band gap two-dimensional layered crystal that is ide...

Ultra-low voltage air-stable polyelectrolyte gated n-type organic thin film transistors

P-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low-temperature technology

P-type and N-type multi-gate vertical thin film transistors (vertical TFTs) have been fabricated, adopting the low-temperature (T ≤ 600°C) polycrystalline silicon (polysilicon) technology. Stacked heavily-doped polysilicon source and drain are electrically isolated by an insulating barrier. Multi-teeth configuration is defined by reactive ion etching leading to sidewalls formation on which undo...

Acceptor-acceptor type isoindigo-based copolymers for high-performance n-channel field-effect transistors.

Two acceptor-acceptor (A-A) type copolymers (PIIG-BT and PIIG-TPD) with backbones composed exclusively of electron-deficient units are designed and synthesized. Both copolymers show unipolar n-type operations. In particular, PIIG-BT shows electron mobility of up to 0.22 cm(2) V(-1) s(-1). This is a record value for n-type copolymers based on lactam cores.